high voltage silicon carbide schottky diodes

650V TO 10KV | 4A TO 200A

Single-die and packaged SiC schottky barrier diodes for mission critical power systems.

industry leading technology

Ultra-low losses, high efficiency

high temperature operation

Reliable upto 175'C junction temperature

high power density

Smaller, lighter and more efficient systems

extreme power reliability

Built for demanding applications

global shipping

Fast, reliable and worldwide delivery

FEATURED PRODUCTS

QS100N08 | 100A 80V 6.5mΩ N-Ch Si MOSFET | TO-220C

AUD $5.740
In Stock
MOQ: 1
REQUEST SAMPLE
100A 80V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS120C040Y4 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247-4L

AUD $17.568
In Stock
REQUEST SAMPLE
66.0A 1200V SiC MOSFET in TO-247-4L package. Rds(on): 40mΩVGS = 20V.

QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P

AUD $17.568
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

AUD $9.135
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

AUD $31.212
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QS120R12I7H | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.83V

QS120R12I7HB | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.68V

QS120R12I7HQ | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.85V

QS120R12IA7H | 1200V 120A Trench Cluster IGBT | TO-247PLUS-4L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-4L — VCEsat 1.69V

QS120R12IA7HQ | 1200V 120A Trench Cluster IGBT | TO-247PLUS-4L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-4L — VCEsat 1.7V

QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

AUD $3.820
In Stock
MOQ: 1
REQUEST SAMPLE
150A 30V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS100N08 | 100A 80V 6.5mΩ N-Ch Si MOSFET | TO-220C

AUD $5.740
In Stock
MOQ: 1
REQUEST SAMPLE
100A 80V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS120C040Y4 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247-4L

AUD $17.568
In Stock
REQUEST SAMPLE
66.0A 1200V SiC MOSFET in TO-247-4L package. Rds(on): 40mΩVGS = 20V.

QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P

AUD $17.568
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

AUD $9.135
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

AUD $31.212
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QS120R12I7H | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.83V

QS120R12I7HB | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.68V

QS120R12I7HQ | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.85V

QS120R12IA7H | 1200V 120A Trench Cluster IGBT | TO-247PLUS-4L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-4L — VCEsat 1.69V

QS120R12IA7HQ | 1200V 120A Trench Cluster IGBT | TO-247PLUS-4L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-4L — VCEsat 1.7V

QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

AUD $3.820
In Stock
MOQ: 1
REQUEST SAMPLE
150A 30V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS100N08 | 100A 80V 6.5mΩ N-Ch Si MOSFET | TO-220C

AUD $5.740
In Stock
MOQ: 1
REQUEST SAMPLE
100A 80V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS120C040Y4 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247-4L

AUD $17.568
In Stock
REQUEST SAMPLE
66.0A 1200V SiC MOSFET in TO-247-4L package. Rds(on): 40mΩVGS = 20V.

QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P

AUD $17.568
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

AUD $9.135
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

AUD $31.212
In Stock
MOQ: 1
REQUEST SAMPLE
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QS120R12I7H | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.83V

QS120R12I7HB | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.68V

QS120R12I7HQ | 1200V 120A Trench Cluster IGBT | TO-247PLUS-3L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-3L — VCEsat 1.85V

QS120R12IA7H | 1200V 120A Trench Cluster IGBT | TO-247PLUS-4L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-4L — VCEsat 1.69V

QS120R12IA7HQ | 1200V 120A Trench Cluster IGBT | TO-247PLUS-4L

AUD $23.760
In Stock
MOQ: 1
REQUEST SAMPLE
Quest Semi Trench Cluster IGBT 1200V/120A TO-247PLUS-4L — VCEsat 1.7V

QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

AUD $3.820
In Stock
MOQ: 1
REQUEST SAMPLE
150A 30V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

MARKETS WE SERVE

AI & DATA CENTERS

High efficiency power conversion

AI & DATA CENTERS

• Server power supplies
• DC-DC converters
• UPS systems
• Power distribution.
VIEW SOLUTIONS

ELECTRIC VEHICLES

Onboard chargers and traction

ELECTRIC VEHICLES

• Onboard chargers
• Traction inverters
• DC-DC converters
• Auxiliary power supplies
VIEW SOLUTIONS

RENEWABLE ENERGY

Solar and wind power systems

RENEWABLE ENERGY

• Inverters
• DC-DC converters
• Energy storage systems
• Power conditioning
VIEW SOLUTIONS

INDUSTRIAL POWER

Motor drives and automation

INDUSTRIAL POWER

• Motor drives
• Industrial inverters
• Welding equipment
• SMPS & power supplies
VIEW SOLUTIONS

ENERGY STORAGE

Reliable Battery storage systems

ENERGY STORAGE

• BMS systems
• DC-DC converters
• Bidirectional inverters
• Power management
VIEW SOLUTIONS

AEROSPACE & DEFENCE

Mission critical systems

AEROSPACE & DEFENCE

• Radar systems
• Power conditioning
• DC power systems
• Avionics power
VIEW SOLUTIONS

WHY CHOOSE QUEST SiC

Lower Switching Losses

Ultra low conduction and switching losses

Temperature Operation

Reliable upto 175'C junction temperature

Increased Power Density

Smaller, lighter and more efficient systems

High Reliability

Built for demanding applications

Global Support

Fast delivery and engineering support

TECHNICAL RESOURCES

Technical documents to accelerate your innovation with Quest Sic.

NEED SAMPLES?

Evaluate Quest SiC devices in your next design with our sample program

NEED MORE ASSISTANCE ?

Our support team are here to help you find the right SiC solution for you