The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.

The QSJW065R26 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L leaded package with an industry-leading 26mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for renewable energy and on-board charger applications.

The QSJW065R36 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 36mΩ typical RDS(ON), high-speed switching and robust thermal performance for renewable energy and high-voltage DC/DC converter designs.