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QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.
AUD $17.568
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1200V
66A
SiC MOSFET
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.
| VDSS | ID | ID | RDS(ON) | PACKAGE |
|---|---|---|---|---|
| 1200V | 66A (Tc=25°C) | 47A (Tc=100°C) | 55mΩ (typ, VGS=20V, ID=40A) | TO-3P |
Asymmetrical bridge converters; Inverters; Single switch forward/flyback converters; PV string inverters; EV charging piles
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.
| VDSS | ID | ID | RDS(ON) | PACKAGE |
|---|---|---|---|---|
| 1200V | 66A (Tc=25°C) | 47A (Tc=100°C) | 55mΩ (typ, VGS=20V, ID=40A) | TO-3P |
Asymmetrical bridge converters; Inverters; Single switch forward/flyback converters; PV string inverters; EV charging piles
