TO-247

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          QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

          AUD $9.135
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          MOQ: 1
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          The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.
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          QS50SCM330U61 | 61A 3300V 50mΩ SiC MOSFET | TO-247

          AUD $165.000
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          MOQ: 1
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          The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.
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          QSD100HCS120U | 100A 1200V SiC Schottky Diode | TO247-2L

          AUD $69.270
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          MOQ: 1
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          100A, 1200V homogeneous Silicon Carbide Schottky diode in a TO-247 package. High-efficiency, high-temperature power rectification.
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          QSD100HCS170U | 100A 1700V SiC Schottky Diode | TO247-2L

          AUD $49.080
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          MOQ: 1
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          410A, 1700V homogeneous Silicon Carbide Schottky diode in a TO-247 package. High-efficiency, high-temperature power rectification.
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          QSD50HCS170U | 50A 1700V SiC Schottky Diode | TO-247-3L

          AUD $34.710
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          MOQ: 1
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          50A, 1700V homogeneous Silicon Carbide Schottky diode in a TO-247 package. High-efficiency, high-temperature power rectification.
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          QSJW065R26 | 99A 650V 26mΩ SiC MOSFET | TO-247

          AUD $23.517
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          MOQ: 1
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          The QSJW065R26 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L leaded package with an industry-leading 26mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for renewable energy and on-board charger applications.
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          QSJW065R36 | 70A 650V 36mΩ SiC MOSFET | TO-247

          AUD $21.843
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          MOQ: 1
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          REQUEST SAMPLE
          The QSJW065R36 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 36mΩ typical RDS(ON), high-speed switching and robust thermal performance for renewable energy and high-voltage DC/DC converter designs.
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          QSJW065R95 | 38A 650V 95mΩ SiC MOSFET | TO-247

          AUD $11.052
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          MOQ: 1
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          REQUEST SAMPLE
          The QSJW065R95 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 95mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for on-board chargers and DC/DC converters.
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          QSMW120R40 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247

          AUD $22.716
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          REQUEST SAMPLE
          66.0A 1200V SiC MOSFET in TO-247 package. Rds(on): 40 mΩVGS=20V.

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