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SiC High Voltage Diodes

900V 8A SiC Schottky Diode

AUD $16.650

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Quantity
Unit Price
1 Piece
AUD $16.650
10 Pieces
AUD $11.280
50 Pieces
AUD $10.690
100 Pieces
AUD $9.940
500+ Pieces
AUD $9.120
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900V

33A

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD8HCS90U is a 33A, 900V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 33A
IF (TC=135°C) 14.8A
IF (TC=150°C) 11A
IFRM (TC=25°C) 45A
IFSM (TC=25°C) 56A
PTOT (TC=25°C) 185W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.4V
VF MAX (TJ=25°C) 1.9V
VF TYP (TJ=175°C) 1.9V
IR MAX (TJ=25°C) 2.8µA
QC 33 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)

The QSD8HCS90U is a 33A, 900V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 33A
IF (TC=135°C) 14.8A
IF (TC=150°C) 11A
IFRM (TC=25°C) 45A
IFSM (TC=25°C) 56A
PTOT (TC=25°C) 185W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.4V
VF MAX (TJ=25°C) 1.9V
VF TYP (TJ=175°C) 1.9V
IR MAX (TJ=25°C) 2.8µA
QC 33 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)