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QSD8HCS90U | 8A 900V SiC Schottky Diode | TO220AC-2L
8A, 900V Silicon Carbide Schottky Barrier Diode. Zero reverse recovery, high-temperature operation to 175°C. TO220AC-2L package. Made in Australia.
AUD $16.650
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900V
8A
Silicon Carbide (SiC)
Schottky Barrier Diode (SBD)
The QSD8HCS90U is a 8A, 900V Silicon Carbide Schottky Barrier Diode in a TO220AC-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 900V | 8A | 14.8A | 1.4V | -55 to 175°C | — °C/W |
The QSD8HCS90U is a 8A, 900V Silicon Carbide Schottky Barrier Diode in a TO220AC-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 900V | 8A | 14.8A | 1.4V | -55 to 175°C | — °C/W |
