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QSD8HCS90U | 8A 900V SiC Schottky Diode | TO-220AC-2
8A, 900V homogeneous Silicon Carbide Schottky diode in a TO-220AC-2 package. High-efficiency, high-temperature power rectification.
AUD $16.650
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900V
8A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD8HCS90U is a 8A, 900V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 900V | 8A | 14.8A | 11A | 1.4V | -55°C to 175°C | — |
The QSD8HCS90U is a 8A, 900V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 900V | 8A | 14.8A | 11A | 1.4V | -55°C to 175°C | — |
