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QSD8HCS65U | 8A 650V SiC Schottky Diode | TO-220AC-2
8A, 650V homogeneous Silicon Carbide Schottky diode in a TO-220AC-2 package. High-efficiency, high-temperature power rectification.
AUD $5.600
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650V
8A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD8HCS65U is a 8A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 650V | 8A | 14A | 9.3A | 1.4V | -55°C to 175°C | — |
The QSD8HCS65U is a 8A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 650V | 8A | 14A | 9.3A | 1.4V | -55°C to 175°C | — |
