QSD80HCS65U | 80A 650V SiC Schottky Diode | TO247-2L - Image 1
Click to enlarge

IN STOCK

QSD80HCS65U | 80A 650V SiC Schottky Diode | TO247-2L

80A, 650V Silicon Carbide Schottky Barrier Diode. Zero reverse recovery, high-temperature operation to 175°C. TO247-HS 2L package. Made in Australia.

AUD $17.710

  • AUD (AUD $)
  • EUR (€)
  • JPY (¥)
  • CNY (¥)
  • USD (USD $)
Quantity
Unit Price
1 Piece
AUD $17.710
10 Pieces
AUD $7.840
50 Pieces
AUD $7.500
100 Pieces
AUD $7.080
500+ Pieces
AUD $5.980
ADD TO QUOTE
REQUEST A SAMPLE
MOQ: 1
  • Ships in 1-2 Business days
  • Worldwide delivery available

650V

80A

Silicon Carbide (SiC)

Schottky Barrier Diode (SBD)

The QSD80HCS65U is a 80A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

VRRM IF (TC=25°C) IF (TC=135°C) VF TYP TJ RTH(J-C)
650V 80A 108A 1.5V -55 to 175°C — °C/W

Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)

The QSD80HCS65U is a 80A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

VRRM IF (TC=25°C) IF (TC=135°C) VF TYP TJ RTH(J-C)
650V 80A 108A 1.5V -55 to 175°C — °C/W

Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)