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QSD6HCS120U | 6A 1200V SiC Schottky Diode | TO247-2L
6A, 1200V Silicon Carbide Schottky Barrier Diode. Zero reverse recovery, high-temperature operation to 175°C. TO247-HS 2L package. Made in Australia.
AUD $16.970
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1200V
6A
Silicon Carbide (SiC)
Schottky Barrier Diode (SBD)
The QSD6HCS120U is a 6A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 1200V | 6A | 13.5A | 1.4V | -55 to 175°C | — °C/W |
The QSD6HCS120U is a 6A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 1200V | 6A | 13.5A | 1.4V | -55 to 175°C | — °C/W |
