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SiC High Voltage Diodes

1200V 6A SiC Schottky Diode

AUD $16.970

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Quantity
Unit Price
1 Piece
AUD $16.970
10 Pieces
AUD $11.500
50 Pieces
AUD $10.890
100 Pieces
AUD $10.130
500+ Pieces
AUD $9.290
MOQ: 1

1200V

26A

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD6HCS120U is a 26A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 26A
IF (TC=135°C) 13.5A
IF (TC=150°C) 10A
IFRM (TC=25°C) 39A
IFSM (TC=25°C) 45A
PTOT (TC=25°C) 176W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.4V
VF MAX (TJ=25°C) 1.8V
VF TYP (TJ=175°C) 2V
IR MAX (TJ=25°C) 50µA
QC 31 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems

The QSD6HCS120U is a 26A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 26A
IF (TC=135°C) 13.5A
IF (TC=150°C) 10A
IFRM (TC=25°C) 39A
IFSM (TC=25°C) 45A
PTOT (TC=25°C) 176W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.4V
VF MAX (TJ=25°C) 1.8V
VF TYP (TJ=175°C) 2V
IR MAX (TJ=25°C) 50µA
QC 31 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems