IN STOCK
QSD50HCS65U | 50A 650V SiC Schottky Diode | TO247-2L
50A, 650V Silicon Carbide Schottky Barrier Diode. Zero reverse recovery, high-temperature operation to 175°C. TO247-HS 2L package. Made in Australia.
AUD $14.000
- Ships in 1-2 Business days
- Worldwide delivery available
- Download Datasheet
- View All Documents
650V
50A
Silicon Carbide (SiC)
Schottky Barrier Diode (SBD)
The QSD50HCS65U is a 50A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 650V | 50A | 68A | 1.5V | -55 to 175°C | — °C/W |
The QSD50HCS65U is a 50A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 650V | 50A | 68A | 1.5V | -55 to 175°C | — °C/W |
