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SiC High Voltage Diodes

3300V 50A SiC Schottky Diode

AUD $227.010

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Quantity
Unit Price
1 Piece
AUD $227.010
10 Pieces
AUD $227.000
50 Pieces
AUD $225.360
100 Pieces
AUD $222.450
500+ Pieces
AUD $222.450
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3300V

205A

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD50HCS330U is a 205A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 205A
IF (TC=135°C) 92.5A
IF (TC=150°C) 70A
IFRM (TC=25°C) 210A
IFSM (TC=25°C) 300A
PTOT (TC=25°C) 1154W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.5V
VF MAX (TJ=25°C) 2V
VF TYP (TJ=175°C) 2.1V
IR MAX (TJ=25°C) 3µA
QC 1276 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems

The QSD50HCS330U is a 205A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 205A
IF (TC=135°C) 92.5A
IF (TC=150°C) 70A
IFRM (TC=25°C) 210A
IFSM (TC=25°C) 300A
PTOT (TC=25°C) 1154W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.5V
VF MAX (TJ=25°C) 2V
VF TYP (TJ=175°C) 2.1V
IR MAX (TJ=25°C) 3µA
QC 1276 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems