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QSD50HCS330U | 50A 3300V SiC Schottky Diode | TO247-2L
50A, 3300V Silicon Carbide Schottky Barrier Diode. Zero reverse recovery, high-temperature operation to 175°C. TO247-HS 2L package. Made in Australia.
AUD $227.010
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3300V
50A
Silicon Carbide (SiC)
Schottky Barrier Diode (SBD)
The QSD50HCS330U is a 50A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 3300V | 50A | 92.5A | 1.5V | -55 to 175°C | — °C/W |
The QSD50HCS330U is a 50A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | VF TYP | TJ | RTH(J-C) |
|---|---|---|---|---|---|
| 3300V | 50A | 92.5A | 1.5V | -55 to 175°C | — °C/W |
