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QSD4HCS120U | 4A 1200V SiC Schottky Diode | TO-220AC-2L
4A, 1200V homogeneous Silicon Carbide Schottky diode in a TO-220AC-2 package. High-efficiency, high-temperature power rectification.
AUD $13.850
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1200V
4A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD4HCS120U is a 4A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 1200V | 4A | 8A | 6A | 1.4V | -55°C to 175°C | — |
The QSD4HCS120U is a 4A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 1200V | 4A | 8A | 6A | 1.4V | -55°C to 175°C | — |
