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SiC High Voltage Diodes
650V 2A SiC Schottky Diode
AUD $2.800
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650V
9A
SiC Schottky Diode
Schottky Barrier Diode (SBD)
The QSD2HCS65U is a 9A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

| PARAMETER | VALUE |
|---|---|
| IF (TC=25°C) | 9A |
| IF (TC=135°C) | 5.9A |
| IF (TC=150°C) | 4.5A |
| IFRM (TC=25°C) | 11A |
| IFSM (TC=25°C) | 12A |
| PTOT (TC=25°C) | 73W |
| TJ MAX | 175¡C |
| VF TYP (TJ=25°C) | 1.4V |
| VF MAX (TJ=25°C) | 1.7V |
| VF TYP (TJ=175°C) | 1.6V |
| IR MAX (TJ=25°C) | 18µA |
| QC | 7.2 nC |
| R?(J-C) | — |
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)
The QSD2HCS65U is a 9A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

| PARAMETER | VALUE |
|---|---|
| IF (TC=25°C) | 9A |
| IF (TC=135°C) | 5.9A |
| IF (TC=150°C) | 4.5A |
| IFRM (TC=25°C) | 11A |
| IFSM (TC=25°C) | 12A |
| PTOT (TC=25°C) | 73W |
| TJ MAX | 175¡C |
| VF TYP (TJ=25°C) | 1.4V |
| VF MAX (TJ=25°C) | 1.7V |
| VF TYP (TJ=175°C) | 1.6V |
| IR MAX (TJ=25°C) | 18µA |
| QC | 7.2 nC |
| R?(J-C) | — |
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)
