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QSD10HCS65U | 10A 650V SiC Schottky Diode | TO-220AC-2
10A, 650V homogeneous Silicon Carbide Schottky diode in a TO-220AC-2 package. High-efficiency, high-temperature power rectification.
AUD $6.260
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650V
10A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD10HCS65U is a 10A, 650V Silicon Carbide Schottky Barrier Diode in a TO-220AC-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 650V | 10A | 13A | 10A | 1.4V | -55°C to 175°C | — |
The QSD10HCS65U is a 10A, 650V Silicon Carbide Schottky Barrier Diode in a TO-220AC-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 650V | 10A | 13A | 10A | 1.4V | -55°C to 175°C | — |
