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SiC High Voltage Diodes

5000V 10A SiC Schottky Diode

AUD $257.400

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Quantity
Unit Price
1 Piece
AUD $257.400
10 Pieces
AUD $232.650
50 Pieces
AUD $212.850
100 Pieces
AUD $193.050
500+ Pieces
AUD $173.250
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5000V

10A

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD10HCS500U is a 5000V, 10A Ultra-High Voltage Silicon Carbide Schottky Barrier Diode Ñ one of the world’s highest voltage rated SiC Schottky diodes. Designed for medical imaging, scientific instrumentation, radar, and defence high-voltage power supplies. Made in Australia.

 

PARAMETER VALUE
IF (TC=25°C) —
IF (TC=135°C) —
IF (TC=150°C) —
IFRM (TC=25°C) —
IFSM (TC=25°C) —
PTOT (TC=25°C) —
TJ MAX —
VF TYP (TJ=25°C) —
VF MAX (TJ=25°C) —
VF TYP (TJ=175°C) —
IR MAX (TJ=25°C) —
QC —
R?(J-C) —
Medical imaging systems (X-ray, CT, MRI) | Scientific instrumentation | Radar and defence systems | High-voltage power supplies | Particle accelerators | Semiconductor manufacturing equipment | Capacitor charging systems

The QSD10HCS500U is a 5000V, 10A Ultra-High Voltage Silicon Carbide Schottky Barrier Diode Ñ one of the world’s highest voltage rated SiC Schottky diodes. Designed for medical imaging, scientific instrumentation, radar, and defence high-voltage power supplies. Made in Australia.

 

PARAMETER VALUE
IF (TC=25°C) —
IF (TC=135°C) —
IF (TC=150°C) —
IFRM (TC=25°C) —
IFSM (TC=25°C) —
PTOT (TC=25°C) —
TJ MAX —
VF TYP (TJ=25°C) —
VF MAX (TJ=25°C) —
VF TYP (TJ=175°C) —
IR MAX (TJ=25°C) —
QC —
R?(J-C) —
Medical imaging systems (X-ray, CT, MRI) | Scientific instrumentation | Radar and defence systems | High-voltage power supplies | Particle accelerators | Semiconductor manufacturing equipment | Capacitor charging systems