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QSD10HCS500U | 10A 5000V SiC Schottky Diode | TO247-HS-2L
10A, 5000V homogeneous Silicon Carbide Schottky diode in a TO-247-4L+2LC package. High-efficiency, high-temperature power rectification.
AUD $257.400
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5000V
10A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD10HCS500U is a 5000V, 10A Ultra-High Voltage Silicon Carbide Schottky Barrier Diode — one of the world’s highest voltage rated SiC Schottky diodes. Designed for medical imaging, scientific instrumentation, radar, and defence high-voltage power supplies. Made in Australia. Image-based PDF — manual entry required
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 5000V | — | — | — | — | — | — |
The QSD10HCS500U is a 5000V, 10A Ultra-High Voltage Silicon Carbide Schottky Barrier Diode — one of the world’s highest voltage rated SiC Schottky diodes. Designed for medical imaging, scientific instrumentation, radar, and defence high-voltage power supplies. Made in Australia. Image-based PDF — manual entry required
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 5000V | — | — | — | — | — | — |
