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QSD10HCS330U | 10A 3300V SiC Schottky Diode | TO247-HS-2L
10A, 3300V homogeneous Silicon Carbide Schottky diode in a TO-247-4L+2LC package. High-efficiency, high-temperature power rectification.
AUD $101.520
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3300V
10A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD10HCS330U is a 10A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 3300V | 10A | 18.5A | 14A | 1.5V | -55°C to 175°C | — |
The QSD10HCS330U is a 10A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 3300V | 10A | 18.5A | 14A | 1.5V | -55°C to 175°C | — |
