IN STOCK
QSD10HCS120U | 10A 1200V SiC Schottky Diode | TO-220AC-2
10A, 1200V homogeneous Silicon Carbide Schottky diode in a TO-220AC-2 package. High-efficiency, high-temperature power rectification.
AUD $21.900
- Ships in 1-2 Business days
- Worldwide delivery available
- Download Datasheet
- View All Documents
1200V
10A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD10HCS120U is a 10A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 1200V | 10A | 18A | 14A | 1.4V | -55°C to 175°C | — |
The QSD10HCS120U is a 10A, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 1200V | 10A | 18A | 14A | 1.4V | -55°C to 175°C | — |
