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SiC High Voltage Diodes

650V 100A SiC Schottky Diode

AUD $19.800

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Quantity
Unit Price
1 Piece
AUD $19.800
10 Pieces
AUD $8.760
50 Pieces
AUD $8.390
100 Pieces
AUD $7.920
500+ Pieces
AUD $6.680
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650V

310A

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD100HCS65U is a 310A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 310A
IF (TC=135°C) 135A
IF (TC=150°C) 100A
IFRM (TC=25°C) 350A
IFSM (TC=25°C) 500A
PTOT (TC=25°C) 938W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.6V
VF MAX (TJ=25°C) —
VF TYP (TJ=175°C) 1.6V
IR MAX (TJ=25°C) 2.8µA
QC 439 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)

The QSD100HCS65U is a 310A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 310A
IF (TC=135°C) 135A
IF (TC=150°C) 100A
IFRM (TC=25°C) 350A
IFSM (TC=25°C) 500A
PTOT (TC=25°C) 938W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.6V
VF MAX (TJ=25°C) —
VF TYP (TJ=175°C) 1.6V
IR MAX (TJ=25°C) 2.8µA
QC 439 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS)