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QSD100HCS65U | 100A 650V SiC Schottky Diode | TO247-2L
100A, 650V homogeneous Silicon Carbide Schottky diode in a TO-247-2L package. High-efficiency, high-temperature power rectification.
AUD $19.800
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650V
100A
Silicon Carbide (SiC)
Homogeneous SiC Schottky Diode
The QSD100HCS65U is a 100A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 650V | 100A | 135A | 100A | 1.6V | -55°C to 175°C | — |
The QSD100HCS65U is a 100A, 650V Silicon Carbide Schottky Barrier Diode in a TO247-2L package. Designed for high-efficiency power conversion in PFC stages, DC-DC converters, and motor drives. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.
| VRRM | IF (TC=25°C) | IF (TC=135°C) | IF (TC=150°C) | VF TYP (TJ=25°C) | TJ RANGE | RTH(J-C) |
|---|---|---|---|---|---|---|
| 650V | 100A | 135A | 100A | 1.6V | -55°C to 175°C | — |
