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SiC High Voltage Diodes

3300V 100A SiC Schottky Diode

AUD $321.050

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Quantity
Unit Price
1 Piece
AUD $321.050
10 Pieces
AUD $321.030
50 Pieces
AUD $318.710
100 Pieces
AUD $314.590
500+ Pieces
AUD $314.590
MOQ: 1

3300V

410A

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD100HCS330U is a 410A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 410A
IF (TC=135°C) 185A
IF (TC=150°C) 140A
IFRM (TC=25°C) 400A
IFSM (TC=25°C) 500A
PTOT (TC=25°C) 2143W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.6V
VF MAX (TJ=25°C) 2.1V
VF TYP (TJ=175°C) 2.3V
IR MAX (TJ=25°C) 3.2µA
QC 2360 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems

The QSD100HCS330U is a 410A, 3300V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) 410A
IF (TC=135°C) 185A
IF (TC=150°C) 140A
IFRM (TC=25°C) 400A
IFSM (TC=25°C) 500A
PTOT (TC=25°C) 2143W
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.6V
VF MAX (TJ=25°C) 2.1V
VF TYP (TJ=175°C) 2.3V
IR MAX (TJ=25°C) 3.2µA
QC 2360 nC
R?(J-C) —
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems