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SiC High Voltage Diodes

1200V 100A SiC Schottky Diode

AUD $69.270

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Quantity
Unit Price
1 Piece
AUD $69.270
10 Pieces
AUD $46.930
50 Pieces
AUD $44.450
100 Pieces
AUD $41.350
500+ Pieces
AUD $37.940
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1200V

ÑA

SiC Schottky Diode

Schottky Barrier Diode (SBD)

The QSD100HCS120U is a ÑA, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) —
IF (TC=135°C) —
IF (TC=150°C) —
IFRM (TC=25°C) 340A
IFSM (TC=25°C) 432A
PTOT (TC=25°C) —
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.71V
VF MAX (TJ=25°C) —
VF TYP (TJ=175°C) 2.51V
IR MAX (TJ=25°C) —
QC 423 nC
R?(J-C) 0.17 ¡C/W
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems

The QSD100HCS120U is a ÑA, 1200V Silicon Carbide Schottky Barrier Diode in a TO247-HS 2L package. Designed for high-power industrial conversion, solar inverters, and traction applications. Zero reverse recovery charge and temperature-independent switching behaviour deliver superior efficiency over silicon rectifiers.

 

PARAMETER VALUE
IF (TC=25°C) —
IF (TC=135°C) —
IF (TC=150°C) —
IFRM (TC=25°C) 340A
IFSM (TC=25°C) 432A
PTOT (TC=25°C) —
TJ MAX 175¡C
VF TYP (TJ=25°C) 1.71V
VF MAX (TJ=25°C) —
VF TYP (TJ=175°C) 2.51V
IR MAX (TJ=25°C) —
QC 423 nC
R?(J-C) 0.17 ¡C/W
Power factor correction (PFC) | Switch-mode power supplies (SMPS) | Solar inverters | Motor drives and variable speed drives | EV on-board chargers | Industrial power conversion | Uninterruptible power supplies (UPS) | Traction inverters | Railway power systems