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QS2Q200045BD | 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2
QS2Q200045BD – 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2
AUD $7,000.000
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2000V
62A
SiC MOSFET
N/A
The QS2Q200045BD is a 2nd Generation Silicon Carbide (SiC) MOSFET bare die rated at 2000V blocking voltage with 45mΩ typical on-resistance. Designed for high-power, high-efficiency switching applications, it features an integrated fast body diode, Kelvin source contact for simplified gate drive design, and a maximum junction temperature of 175°C. Sold in wafer form.
| Specification | Value |
|---|---|
| Vds | 2000V |
| Id | 62A @ Tc=25°C, 46A @ Tc=100°C |
| Rds(on) typ | 43mΩ (Vgs=18V, Tj=25°C), 56mΩ max |
| Vth | 1.8–4.5V (typ 2.8V) |
| Ciss | 3950pF |
| Qg | 175nC |
| trr | 46ns |
| Qrr | 550nC |
| Tj max | 175°C |
| Specification | Rθ(j-c) < 0.3°C/W |
The QS2Q200045BD is a 2nd Generation Silicon Carbide (SiC) MOSFET bare die rated at 2000V blocking voltage with 45mΩ typical on-resistance. Designed for high-power, high-efficiency switching applications, it features an integrated fast body diode, Kelvin source contact for simplified gate drive design, and a maximum junction temperature of 175°C. Sold in wafer form.
| Specification | Value |
|---|---|
| Vds | 2000V |
| Id | 62A @ Tc=25°C, 46A @ Tc=100°C |
| Rds(on) typ | 43mΩ (Vgs=18V, Tj=25°C), 56mΩ max |
| Vth | 1.8–4.5V (typ 2.8V) |
| Ciss | 3950pF |
| Qg | 175nC |
| trr | 46ns |
| Qrr | 550nC |
| Tj max | 175°C |
| Specification | Rθ(j-c) < 0.3°C/W |
